Liquid crystal display device

ABSTRACT

A display device includes: a substrate including a display area at which an image is displayed; and on the substrate in the display area thereof: a data line and a gate line on the substrate; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film transistor; and a storage line which overlaps the pixel electrode. The storage line has a first hole at a position overlapping the data line.

BACKGROUND 1. Field

Embodiments of the invention relate to a display device, and moreparticularly, to a display device capable of reducing disconnection of adata line.

2. Description of the Related Art

Liquid crystal display (“LCD”) devices are one of the most widely usedtypes of flat panel display (“FPD”) devices. An LCD device includes twosubstrates including electrodes formed thereon and a liquid crystallayer interposed therebetween. Upon applying voltage to the twoelectrodes, liquid crystal molecules of the liquid crystal layer arerearranged such that an amount of transmitted light is controlled in theLCD device.

SUMMARY

Embodiments of the invention may be directed to a display device capableof easily repairing disconnection defects of a data line.

According to an exemplary embodiment, a display device includes: asubstrate including a display area at which an image is displayed; andon the substrate in the display area thereof: a data line and a gateline on the substrate; a thin film transistor connected to the gate lineand the data line; a pixel electrode connected to the thin filmtransistor; and a storage line which overlaps the pixel electrode. Thestorage line has a first hole at a position overlapping the data line.

The storage line may include a horizontal portion parallel to the gateline and a vertical portion parallel to the data line.

At a position of the data line, the horizontal portion may have thefirst hole at a position overlapping the data line.

At a position of the data line, the vertical portion may have a secondhole at a position overlapping the data line.

The vertical portion may extend from the horizontal electrode portion ata position of the data line.

According to an exemplary embodiment, a display device includes: asubstrate including a display area at which an image is displayed; andon the substrate in the display area thereof; a data line and a gateline on the substrate; a thin film transistor connected to the gate lineand the data line; a pixel electrode connected to the thin filmtransistor; and a storage line which overlaps the pixel electrode. Thedata line includes a protruding portion extended toward the pixelelectrode to overlap the storage line.

The protruding portion may be disposed parallel with the gate line.

The protruding portion may overlap the pixel electrode.

The storage line may include a horizontal portion parallel to the gateline and a vertical portion parallel to the data line.

The vertical portion may be disposed between the pixel electrode and thedata line.

The protruding portion may overlap the vertical portion.

The protruding portion may overlap the pixel electrode.

The vertical portion may extend from the horizontal portion at aposition of the data line.

The storage line may further include a bent portion connecting thehorizontal portion and the vertical portion to each other.

The protruding portion may overlap the bent portion.

The protruding portion may overlap the pixel electrode.

The foregoing is illustrative only and is not intended to be in any waylimiting. In addition to the illustrative exemplary embodiments andfeatures described above, further exemplary embodiments and featureswill become apparent by reference to the drawings and the followingdetailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention will become more apparentby describing in detail exemplary embodiments thereof with reference tothe accompanying drawings, where:

FIG. 1 is a top plan view schematically illustrating an exemplaryembodiment of a pixel of a display device according to the invention;

FIG. 2 is an enlarged cross-sectional view taken along line I-I′ of FIG.1;

FIG. 3 is an enlarged cross-sectional view taken along line II-II′ ofFIG. 1;

FIG. 4 is an enlarged cross-sectional view taken along line and lineIV-IV′ of FIG. 1;

FIG. 5 is a top plan view illustrating an exemplary embodiment of amethod of repairing a signal line of a display device using a storageline in a pixel of the display device of FIG. 1;

FIG. 6 is a top plan view schematically illustrating another exemplaryembodiment of a pixel of a display device according to the invention;

FIG. 7 is a top plan view illustrating an exemplary embodiment of amethod of repairing a signal line using a storage line in a pixel of thedisplay device of FIG. 6; and

FIG. 8 is a top plan view schematically illustrating still anotherexemplary embodiment of a pixel of a display device according to theinvention.

DETAILED DESCRIPTION

Exemplary embodiments will now be described more fully hereinafter withreference to the accompanying drawings. Although the invention may bemodified in various manners and have several exemplary embodiments,exemplary embodiments are illustrated in the accompanying drawings andwill be mainly described in the specification. However, the scope of theinvention is not limited to the exemplary embodiments and should beconstrued as including all the changes, equivalents and substitutionsincluded in the spirit and scope of the invention.

In the drawings, thicknesses of a plurality of layers and areas areillustrated in an enlarged manner for clarity and ease of descriptionthereof. When a layer, area or plate is referred to as being “on”another layer, area or plate, it may be directly on the other layer,area or plate, or intervening layers, areas or plates may be presenttherebetween. Conversely, when a layer, area or plate is referred to asbeing “directly on” another layer, area or plate, intervening layers,areas or plates are absent therebetween. Further when a layer, area orplate is referred to as being “below” another layer, area or plate, itmay be directly below the other layer, area or plate, or interveninglayers, areas or plates may be present therebetween. Conversely, when alayer, area or plate is referred to as being “directly below” anotherlayer, area or plate, intervening layers, areas or plates are absenttherebetween.

The spatially relative terms “below,” “beneath,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe the relations between one element or component and anotherelement or component as illustrated in the drawings. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation, in addition tothe orientation depicted in the drawings. For example, in the case wherea device illustrated in the drawing is turned over, the device located“below” or “beneath” another device may be placed “above” anotherdevice. Accordingly, the illustrative term “below” may include both thelower and upper positions. The device may also be oriented in the otherdirection and thus the spatially relative terms may be interpreteddifferently depending on the orientations.

Throughout the specification, when an element is referred to as being“connected” to another element, the element is “mechanically connected”or “physically connected” to the other element, or “electricallyconnected” to the other element with one or more intervening elementsinterposed therebetween.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “At least one” is not to be construed as limiting “a” or“an.” “Or” means “and/or.” As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.It will be further understood that the terms “comprises,” “including,”“includes” and/or “including,” when used in this specification, specifythe presence of stated features, integers, steps, operations, elementsand/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components and/or groups thereof.

It will be understood that, although the terms “first,” “second,”“third,” and the like may be used herein to describe various elements,these elements should not be limited by these terms. These terms areonly used to distinguish one element from another element. Thus, “afirst element” discussed below could be termed “a second element” or “athird element,” and “a second element” and “a third element” may betermed likewise without departing from the teachings herein.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

Unless otherwise defined, all terms used herein (including technical andscientific terms) have the same meaning as commonly understood by thoseskilled in the art to which this invention pertains. It will be furtherunderstood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an ideal or excessively formal sense unlessclearly defined in the present specification.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the present claims.

Some of the parts which are not associated with the description may notbe provided in order to specifically describe embodiments of theinvention and like reference numerals refer to like elements throughoutthe specification.

A display device such as a liquid crystal display (“LCD”) device,displays an image with light. The image may be generated and/ordisplayed at a display area of a display panel of the display device,such as by a pixel disposed in the display area. Within the displaydevice, a signal is applied to a thin film transistor of a pixel usingconductive signal lines, such as a data line and a gate line withoutbeing limited thereto. Light is generated within the display panel todisplay the image (e.g., self-emissive display device) or light isgenerated outside the display panel and provided thereto to display theimage (e.g., non-self-emissive display device).

When a conductive signal wiring such as the data line is electricallyopen due to foreign substances introduced in a process of manufacturingthe display device, a separate conductive wiring is formed for repairingthe electrical connections within the display device. However, theforming of the separate conductive wiring is an additional processleading to a decrease in process efficiency. In addition, when aconductive signal wiring such as the data line is electrically openafter the manufacturing process is completed, repairing the defectiveelectrical connections due to the electrically open signal line withinthe completed display device may be difficult. In addition, when aconventional signal wiring of the prior art, e.g., a conductive storageline, is used as a repair wiring, the signal wiring may not serve anoriginal function thereof such as for transmitting a voltage signal fordisplaying an image.

FIG. 1 is a top plan view schematically illustrating an exemplaryembodiment of a pixel of a display device according to the invention,FIG. 2 is an enlarged cross-sectional view taken along line I-I′ of FIG.1, FIG. 3 is an enlarged cross-sectional view taken along line II-II′ ofFIG. 1, and FIG. 4 is an enlarged cross-sectional view taken along lineand line IV-IV′ of FIG. 1.

As illustrated in FIGS. 1, 2, 3 and 4, a single one pixel within thedisplay area of the display device includes a first thin film transistorTFT1, a second thin film transistor TFT2, a third thin film transistorTFT3, a storage line 740 and 750, a color filter 354, a first sub-pixelelectrode PE1, a first extension electrode 181, a second sub-pixelelectrode PE2, a second extension electrode 182, a common electrode 210,and an optical control layer such as a liquid crystal layer 333 whichcontrols transmittance of light for displaying an image. The storageline 740 and 750 will be described as a first storage line 740 and asecond storage line 750, separately, for convenience of explanation. Anyof the above-described elements may be provided in plurality within adisplay panel of the display device.

The display device and components thereof are disposed in a planedefined by a first direction (e.g., horizontal in FIG. 1) and a seconddirection (e.g., vertical in FIG. 1) which cross each other. A thicknessof the display device and components thereof is defined in a thirddirection (e.g., vertical in FIGS. 2-4) which crosses each of the firstand second directions. The display device and components thereof maydefine a length which is larger than a width thereof. The width may bedefined in a direction perpendicular to the length direction.

As being unitarily formed, a portion of one element among a collectionof elements may extend to define another one or all of the otherelements among the collection thereof. In an exemplary embodiment,elements being unitarily formed may be disposed in a same single layerof the display device among layers disposed on a base substrate thereofand/or may be formed from a same single material layer in a method ofmanufacturing the display device.

The first thin film transistor TFT1 includes a first gate electrode GE1,a first semiconductor layer 311, a first drain electrode DE1 and a firstsource electrode SE1, as illustrated in FIG. 1 and FIG. 2.

The second thin film transistor TFT2 includes a second gate electrodeGE2, a second semiconductor layer 312, a second drain electrode DE2 anda second source electrode SE2, as illustrated in FIG. 1 and FIG. 3.

The third thin film transistor TFT3 includes a third gate electrode GE3,a third semiconductor layer 313, a third drain electrode DE3, and athird source electrode SE3, as illustrated in FIG. 1 and FIG. 4.

As illustrated in FIG. 1, a gate line GL is located on a first (base)substrate 301. In an exemplary embodiment, for example, the gate line GLis located at a transistor area T of the first substrate 301. Thetransistor area T is located between a first sub-pixel area P1 and asecond sub-pixel area P2. The sub-pixel areas P1 and P2 may beconsidered a display portion of the pixel while the transistor area Tmay be considered a non-display portion of the pixel.

The gate line GL includes or is defined by a line portion 411, and afirst gate electrode GE1, a second gate electrode GE2 and a third gateelectrode GE3 each extending from the line portion 411. The line portion411 defines a length thereof extended in a first direction (e.g.,horizontal in FIG. 1), while the first to third gate electrodes GE1 toGE3 define lengths thereof extended in a second direction (e.g.,vertical in FIG. 1) from the line portion 411. The line portion 411 andthe first to third gate electrodes GE1 to GE3 have line widths differentfrom each other. In an exemplary embodiment, for example, the first,second and third gate electrodes GE1, GE2 and GE3 may have a line widthlarger than a line width of the line portion 411. The line portion 411and the first, second and third gate electrodes GE1, GE2 and GE3 areunitarily formed.

Although not illustrated, a contact portion (e.g., an end or terminalportion) of the gate line GL may have a planar area larger than a planararea of other portions of the gate line GL for connection to anotherlayer of the display device or an external driving circuit (not shown).The end or terminal portion of the gate line GL may be disposed outsidethe display area of a display panel, such as in a non-display areathereof at which an image is not displayed.

The gate line GL may include or be formed of one of: aluminum (Al) oralloys thereof, silver (Ag) or alloys thereof, copper (Cu) or alloysthereof and/or molybdenum (Mo) or alloys thereof. In addition, the gateline GL may include or be formed of one of: chromium (Cr), tantalum (Ta)and/or titanium (Ti). In addition, the gate line GL may have a singlelayer structure or a multilayer structure including at least twoconductive layers that have different physical properties from eachother.

The first storage line 740 is located on the first substrate 301. In anexemplary embodiment, for example, the first storage line 740 islengthwise extended at boundary portions of the transistor area T andthe first sub-pixel area P1 of the first substrate 301 and is disposedat opposing sides of the data line DL to be considered as disposedaround the data line DL. The first storage line 740 is adjacent to oneside of the first sub-pixel electrode PE1. In an exemplary embodiment,for example, portions of a collective one of the first storage line 740may be located at an upper side, a left side and a right side of thefirst sub-pixel electrode PE1, as illustrated in FIG. 1. Lengthwiseextended portions of the first storage line 740 may have a linear shape,as illustrated in FIG. 1. In such an exemplary embodiment, the firststorage line 740 and the first sub-pixel electrode PE1 may overlap eachother or may not overlap each other. When the first storage line 740overlaps the first sub-pixel electrode PE1, a portion of the firststorage line 740 may overlap at least one side of the first sub-pixelelectrode PE1. Where the first-sub-pixel electrode PE1 includes a stem(portion) electrode and branch electrodes which extend from the stemportion, the portion of the storage line may also overlap a stemelectrode of the first sub-pixel electrode PE1.

Alternatively, dissimilar to FIG. 1, the first storage line 740 may notoverlap the stem electrode of the first sub-pixel electrode PE1 and mayoverlap only an edge portion of the first sub-pixel electrode PE1.

The first storage line 740 receives a first storage voltage from outsidethereof, such as from a component of the display device disposed outsidethe display panel and/or outside the display area thereof. The firststorage voltage may be a direct-current (“DC”) voltage.

The first storage line 740 may include a substantially same material andmay have a substantially same structure (a single or multilayerstructure) as those of the above-described gate line GL. In other words,the gate line GL and the first storage line 740 may be disposed in asame layer among layers disposed on the first substrate 301. In anexemplary embodiment, the gate line GL and the first storage line 740may be formed substantially simultaneously in a substantially sameprocess, such as from a same single material layer, in a method ofmanufacturing the display device.

The second storage line 750 is located on the first substrate 301. In anexemplary embodiment, for example, the second storage line 750 islengthwise extended at boundary portions of the transistor area T andthe second sub-pixel area P2 of the first substrate 301 and is disposedat opposing sides of the data line DL to be considered as disposedaround the data line DL. The second storage line 750 is adjacent to oneside of the second sub-pixel electrode PE2. In an exemplary embodiment,for example, the second storage line 750 may be located at an upperside, a left side and a right side of the second sub-pixel electrodePE2, as illustrated in FIG. 1. Lengthwise extended portions of thesecond storage line 750 may have a linear shape, as illustrated inFIG. 1. In such an exemplary embodiment, the second storage line 750 andthe second sub-pixel electrode PE2 may overlap each other or may notoverlap each other. When the second storage line 750 overlaps the secondsub-pixel electrode PE2, a portion of the second storage line 750 mayoverlap at least one side of the second sub-pixel electrode PE2. Wherethe second sub-pixel electrode PE2 includes a stem (portion) electrodeand branch electrodes which extend from the stem portion, the portion ofthe storage line may also overlap a stem electrode of the secondsub-pixel electrode PE2.

Alternatively, dissimilar to FIG. 1, the second storage line 750 may notoverlap the stem electrode of the second sub-pixel electrode PE2 and mayoverlap only an edge portion of the second sub-pixel electrode PE2.

The second storage line 750 and the first storage line 740 are notconnected to each other. That is, the second storage line 750 and thefirst storage line 740 are separated from each other, physically and/orelectrically, to be disconnected from each other.

The second storage line 750 receives a second storage voltage fromoutside thereof, such as from a component of the display device disposedoutside the display panel and/or outside the display area thereof. Thesecond storage voltage received by the second storage line 750 and thefirst storage voltage received by the first storage line 740 may havedifferent magnitudes from each other. In an exemplary embodiment, forexample, the second storage voltage may be a DC voltage that is greaterthan or less than the first storage voltage.

When the second storage voltage is set to be less than the first storagevoltage, the capability of removing afterimage of the display device maybe improved. On the other hand, when the second storage voltage is setto be greater than the first storage voltage, the capability ofmitigating flickering phenomenon may be improved.

Alternatively, the first storage line 740 and the second storage line750 may be connected to each other and a substantially same commonvoltage may be applied thereto. That is, the second storage line 750 andthe first storage line 740 connected physically and/or electrically,such that the substantially same common voltage may be applied thereto.

The second storage line 750 may include a substantially same materialand may have a substantially same structure (a single or multilayerstructure) as those of the above-described gate line GL. In other words,the gate line GL and the second storage line 750 may be disposed in asame layer among layers disposed on the first substrate 301. In anexemplary embodiment, the gate line GL and the first storage line 740may be formed substantially simultaneously in a substantially sameprocess, such as from a same single material layer, in a method ofmanufacturing the display device.

In an exemplary embodiment, the first storage line 740 includes ahorizontal (electrode) portion 741 disposed lengthwise parallel to thegate line GL and a vertical (electrode) portion 742 disposed lengthwiseparallel to the data line DL, for a repair process of the data line DL.The vertical portion 742 lengthwise extends from a portion of thehorizontal portion 741 overlapping the data line DL. In addition, thefirst storage line 740 defines a first (horizontal) hole 743 at aposition overlapping the data line DL. In an exemplary embodiment, forexample, the horizontal portion 741 defines the first hole 743 at aposition overlapping the data line DL, and the vertical portion 742defines a second (vertical) hole 744 at a position overlapping the dataline DL. As the vertical portion 742 has the second hole 744, thevertical portion 742 is formed into double wirings.

The first storage line 740 may form two closed-loop shapes at a portionof a same data line DL which corresponds to the first sub-pixel area P1.The two closed-loop shapes at the same data line DL respectively definethe first hole 743 and the second hole 744 at which the portion of thesame data line DL is disposed in the top plan view. A commonhorizontally-extended portion of the first storage line 740 is disposedbetween the first and second holes 743 and 744.

In addition, the second storage line 750 includes a horizontal(electrode) portion 751 disposed lengthwise parallel to the gate line GLand a vertical (electrode) portion 752 disposed lengthwise parallel tothe data line DL. The vertical portion 752 lengthwise extends from aportion of the horizontal portion 751 overlapping the data line DL. Inaddition, the second storage line 750 defines a first hole 753 at aposition overlapping the data line DL. In an exemplary embodiment, forexample, spaced apart portions of the horizontal portion 751 define anopening as a first hole 753 at a position overlapping the data line DL,and spaced apart portions of the vertical portion 752 define an openingas a second hole 754 at a position overlapping the data line DL.

The second storage line 750 may form two closed-loop shapes at a portionof a same data line DL which corresponds to the second sub-pixel areaP2. The two closed-loop shapes at the same data line DL respectivelydefine the first hole 753 and the second hole 754 at which the portionof the same data line DL is disposed in the top plan view. A commonhorizontally-extended portion of the second storage line 750 is disposedbetween the first and second holes 753 and 754.

By configuring the first and second storage lines 740 and 750 in themanner described above, the data line DL may be easily repaired, whichwill be described in detail with reference to FIG. 5.

FIG. 5 is a top plan view illustrating an exemplary embodiment of amethod of repairing a signal line of a display device using a storageline in a pixel of the display device of FIG. 1. While structuresrelated to a data line at the first sub-pixel area P1 are described forrepairing the signal line, the same method may be used for repairingdefects using structures related to the data line at the secondsub-pixel area P2.

Referring to FIG. 5, an open defect may occur at a portion F of the dataline DL. In such an exemplary embodiment, a connecting portion CUT whichconnects the horizontal portion 741 and the vertical portion 742 of thefirst storage line 740 to each other is open to disconnect thehorizontal portion 741 from the vertical portion 742. The data line DLis connected at C1 and C2 to the vertical portion 742, bypassing theopen defect at portion F. The connection points C1 and C2 are disposedat the horizontal portions of the vertical portion 742 which overlap thedata line DL at opposing sides of the first sub-pixel area P1 along thevertical direction in FIG. 1.

Accordingly, a data signal D may be normally applied to the pixelsthrough the vertical portion 742 of the first storage line 740 connectedto the data line DL and a voltage signal V may be normally applied tothe pixels through the horizontal portion 741 of the first storage line740. That is, only the vertical portion 742 of the first storage line740 is used as the repair line of the data line DL, while the horizontalportion 741 of the first storage line 740 may still be used as a storagevoltage transmission path. Accordingly, defects of the data line DL maybe easily repaired as compared with a conventional structure of theprior art forming a separate conductive wiring in an additional process.In addition, as compared with the convention structure of the prior art,the first storage line 740 may still serve an original function oftransmitted the voltage signal V even while a portion thereof is beingused as the repair line.

Remaining configurations of an exemplary embodiment will be furtherdescribed in detail below.

A gate insulating layer 310 is located on the gate line GL, the firststorage line 740 and the second storage line 750. In such an exemplaryembodiment, the gate insulating layer 310 may be disposed or formed overan entire surface of the first substrate 301 including the first andsecond storage lines 740 and 750.

The gate insulating layer 310 may include silicon nitride (SiNx),silicon oxide (SiOx), or the like. The gate insulating layer 310 mayhave a single layer structure or a multilayer structure including atleast two insulating layers having different physical properties fromeach other.

The first, second and third semiconductor layers 311, 312 and 313 areeach located on the gate insulating layer 310. In such an exemplaryembodiment, the first semiconductor layer 311 overlaps the first gateelectrode GE1, the second semiconductor layer 312 overlaps the secondgate electrode GE2, and the third semiconductor layer 313 overlaps thethird gate electrode GE3.

The first, second and third semiconductor layers 311, 312 and 313 may beconnected to each other. Referring to FIG. 1, the first semiconductorlayer 311 and the second semiconductor layer 312 are connected to eachother.

Each of the first, second and third semiconductor layers 311, 312 and313 may include amorphous silicon, polycrystalline silicon, or the like.

An ohmic contact layer 360 is located on the first, second, and thirdsemiconductor layers 311, 312, and 313. The ohmic contact layer 360 mayinclude silicide or n+ hydrogenated amorphous silicon doped with n-typeimpurities, e.g., phosphorus (P), at a relatively high concentration.

The first drain electrode DE1 and the first source electrode SE1included in the first thin film transistor TFT1, the second drainelectrode DE2 and the second source electrode SE2 included in the secondthin film transistor TFT2, and the third drain electrode DE3 and thethird source electrode SE3 included in the third thin film transistorTFT3 are located on the ohmic contact layer 360.

The first source electrode SE1 extends from the data line DL to thetransistor area T and is located on the first gate electrode GE1 and thefirst semiconductor layer 311, as illustrated in FIG. 1. The firstsource electrode SE1 overlaps the first gate electrode GE1 and the firstsemiconductor layer 311. In the top plan view, the first sourceelectrode SE1 may have one of a C-like shape, an inverted C-like shape,a U-like shape and an inverted U-like shape. In FIG. 1, for example, thefirst source electrode SE1 having a U-like shape is illustrated.

In an exemplary embodiment, for example, the first source electrode SE1may include a refractory metal, e.g., molybdenum, chromium, tantalum andtitanium and/or an alloy thereof. The first source electrode SE1 mayhave a single layer structure or a multilayer structure including arefractory metal layer and a low-resistance conductive layer. Examplesof the multilayer structure may include: a double-layer structureincluding a chromium or molybdenum (alloy) lower layer and an aluminum(alloy) upper layer; and a triple-layer structure including a molybdenum(alloy) lower layer, an aluminum (alloy) intermediate layer and amolybdenum (alloy) upper layer. In an exemplary embodiment, the firstsource electrode SE1 may include or be formed of any suitable metalsand/or conductors rather than the aforementioned materials.

The first drain electrode DE1 is located on the first gate electrode GE1and the first semiconductor layer 311. In the top plan view, the firstdrain electrode DE1 overlaps the first gate electrode GE1, the firstsemiconductor layer 311 and the first extension electrode 181. In suchan exemplary embodiment, the first drain electrode DE1 is connected tothe first extension electrode 181 through a first contact hole CH1.

The first drain electrode DE1 may include a substantially same materialand may have a substantially same structure (a single layer ormultilayer structure) as those of the first source electrode SE1. Inother words, the first drain electrode DE1 and the first sourceelectrode SE1 may be formed substantially simultaneously in asubstantially same process, such as from a same single material layer,in a method of manufacturing the display device.

The first gate electrode GE1, the first drain electrode DE1, the firstsource electrode SE1, the first semiconductor layer 311 and the ohmiccontact layer 360 constitute the first thin film transistor TFT1. Thatis, the first thin film transistor TFT1 is connected to a gate line GLand a data line DL. In such an exemplary embodiment, a channel of thefirst thin film transistor TFT1 is located at a portion of the firstsemiconductor layer 311 exposed between the first drain electrode DE1and the first source electrode SE1. The portion of the firstsemiconductor layer 311 corresponding to the channel portion has athickness less than a thickness of another or remaining portion of thefirst semiconductor layer 311. As illustrated in FIG. 1, the first thinfilm transistor TFT1 is located at the transistor area T.

The second source electrode SE2 is electrically connected to the firstsource electrode SE1. To this end, the second source electrode SE2 andthe first source electrode SE1 may be unitarily formed. That is, thefirst source electrode SE1 and the second source electrode SE2 areunitarily formed (e.g., in a monolithic structure) and are connected toeach other. In addition, the first source electrode SE1 and the secondsource electrode SE2 which are unitarily formed may have a W-like shapein the top plan view.

The second source electrode SE2 is located on the second gate electrodeGE2 and the second semiconductor layer 312. The second source electrodeSE2 overlaps the second gate electrode GE2 and the second semiconductorlayer 312. The second source electrode SE2 may have one of a C-likeshape, an inverted C-like shape, a U-like shape and an inverted U-likeshape in the top plan view. In an exemplary embodiment, for example, thesecond source electrode SE2 having a U-like shape is illustrated in FIG.1.

The second source electrode SE2 may include a substantially samematerial and may have a substantially same structure (a single layer ormultilayer structure) as those of the first source electrode SE1. Inother words, the second source electrode SE2 and the first sourceelectrode SE1 may be formed substantially simultaneously in asubstantially same process, such as from a same single material layer,in a method of manufacturing the display device.

The second drain electrode DE2 is located on the second gate electrodeGE2 and the second semiconductor layer 312. The second drain electrodeDE2 overlaps the second gate electrode GE2, the second semiconductorlayer 312 and the second extension electrode 182 in the top plan view.In such an exemplary embodiment, the second drain electrode DE2 isconnected to the second extension electrode 182 through a second contacthole CH2.

The second drain electrode DE2 may include a substantially same materialand may have a substantially same structure (a single or multilayerstructure) as those of the first source electrode SE1. In other words,the second drain electrode DE2 and the first source electrode SE1 may beformed substantially simultaneously in a substantially same process,such as from a same single material layer, in a method of manufacturingthe display device.

In an exemplary embodiment, the first drain electrode DE1 and the seconddrain electrode DE2 have portions which extend in a substantially samedirection as each other. In an exemplary embodiment, for example, asillustrated in FIG. 1, portions of each of the first drain electrode DE1and the second drain electrode DE2 lengthwise extend in a directiontoward the first source electrode SE1 and the second source electrodeSE2.

The second gate electrode GE2, the second drain electrode DE2, thesecond source electrode SE2, the second semiconductor layer 312 and theohmic contact layer 360 constitute the second thin film transistor TFT2.That is, the second thin film transistor TFT2 is connected to a gateline GL and a data line DL. In such an exemplary embodiment, a channelof the second thin film transistor TFT2 is located at a portion of thesecond semiconductor layer 312 exposed between the second drainelectrode DE2 and the second source electrode SE2. The portion of thesecond semiconductor layer 312 corresponding to the channel portion hasa thickness less than a thickness of another or remaining portion of thesecond semiconductor layer 312. As illustrated in FIG. 1, the secondthin film transistor TFT2 is located at the transistor area T.

The third source electrode SE3 is electrically connected to the seconddrain electrode DE2. To this end, the third source electrode SE3 and thesecond drain electrode DE2 may be unitarily formed. The third sourceelectrode SE3 is located on the third gate electrode GE3 and the thirdsemiconductor layer 313. The third source electrode SE3 overlaps thethird gate electrode GE3, the third semiconductor layer 313 and thesecond extension electrode 182 in the top plan view.

The third source electrode SE3 may include a substantially same materialand may have a substantially same structure (a multilayer structure) asthose of the first source electrode SE1. In other words, the thirdsource electrode SE3 and the first source electrode SE1 may be formedsubstantially simultaneously in a substantially same process, such asfrom a same single material layer, in a method of manufacturing thedisplay device.

The third drain electrode DE3 is located on the third gate electrode GE3and the third semiconductor layer 313. The third drain electrode DE3overlaps the third gate electrode GE3 and the third semiconductor layer313. The third drain electrode DE3 may include a substantially samematerial and may have a substantially same structure (a multilayerstructure) as those of the first source electrode SE1. In other words,the third drain electrode DE3 and the first source electrode SE1 may beformed substantially simultaneously in a substantially same process,such as from a same single material layer, in a method of manufacturingthe display device.

The third gate electrode GE3, the third drain electrode DE3, the thirdsource electrode SE3, the third semiconductor layer 313 and the ohmiccontact layer 360 constitute the third thin film transistor TFT3. Thatis, the third thin film transistor TFT3 is connected to a gate line GLand a data line DL. In such an exemplary embodiment, a channel of thethird thin film transistor TFT3 is located at a portion of the thirdsemiconductor layer 313 exposed between the third drain electrode DE3and the third source electrode SE3. The portion of the thirdsemiconductor layer 313 corresponding to the channel portion has athickness less than a thickness of another or remaining portion of thethird semiconductor layer 313. As illustrated in FIG. 1, the third thinfilm transistor TFT3 is located at the transistor area T.

The data line DL is located on the gate insulating layer 310. Althoughnot illustrated, a contact portion (e.g., an end or terminal portion) ofthe data line DL may have a planar area larger than a planar area ofanother portion of the data line DL for connection to another layer ofthe display device or an external driving circuit (not shown). The endor terminal portion of the data line DL may be disposed outside thedisplay area of a display panel, such as in a non-display area thereofat which an image is not displayed.

The data line DL crosses each of the gate line GL, the first storageline 740 and the second storage line 750. Although not illustrated, aportion of the data line DL crossing the gate line GL may have a linewidth less than a line width of another or remaining portion of the dataline DL. Similarly, a portion of the data line DL crossing the first andsecond storage lines 740 and 750 may have a line width less than a linewidth of another or remaining portion of the data line DL. Accordingly,a parasitic capacitance between the data line DL and the gate line GLand a parasitic capacitance between the data line DL and each of thefirst and second storage lines 740 and 750 may be reduced. The data lineDL may include a substantially same material and have a substantiallysame structure (a multilayer structure) as those of the first sourceelectrode SE1. In other words, the data line DL and the first sourceelectrode SE1 may be formed substantially simultaneously in asubstantially same process, such as from a same single material layer,in a method of manufacturing the display device.

Although not illustrated, a semiconductor layer and an ohmic contactlayer may be additionally located below the data line DL, the first,second and third drain electrodes DE1, DE2 and DE3, and the first,second and third source electrodes SE1, SE2 and SE3.

A protection layer 320 is located on the data line DL, the first, secondand third drain electrodes DE1, DE2 and DE3, and the first, second andthird source electrodes SE1, SE2 and SE3. In such an exemplaryembodiment, the protection layer 320 may be located over an entiresurface of the first substrate 301 including the data line DL, thefirst, second and third drain electrodes DE1, DE2 and DE3, and thefirst, second and third source electrodes SE1, SE2 and SE3. Asplanarizing layers on the first substrate 301, the protection layer 320serves to eliminate a height difference between components locatedbetween the protection layer 320 and the first substrate 301, e.g.,components of the first substrate 301 such as the data line DL, thefirst, second and third drain electrodes DE1, DE2 and DE3, and thefirst, second and third source electrodes SE1, SE2 and SE3. In addition,the protection layer 320 also serves to protect the components of thefirst substrate 301.

The protection layer 320 may include an inorganic insulating material,e.g., silicon nitride (SiN_(x)) or silicon oxide (SiO_(x)). In such anexemplary embodiment, an inorganic insulating material havingphotosensitivity and a dielectric constant of about 4.0 may be used. Inan exemplary embodiment, the protection layer 320 may have a singlelayer or double-layer structure including a lower inorganic layer and anupper organic layer, which is found to impart excellent insulatingcharacteristics of an organic layer and not to damage an exposed portionof the semiconductor layers 311, 312 and 313. The protection layer 320may have a thickness greater than or equal to about 5000 angstroms (Å),e.g., in a range from about 6000 Å to about 8000 Å.

The protection layer 320 has first and second contact holes CH1 and CH2defined therein passing through a portion of the protection layer 320.The first drain electrode DE1 and the second drain electrode DE2 areexposed through or at the first and second contact holes CH1 and CH2.

The first sub-pixel electrode PE1 is located on the protection layer320. In an exemplary embodiment, for example, the first sub-pixelelectrode PE1 is located on the protection layer 320 of the firstsub-pixel area P1.

The first sub-pixel electrode PE1 may include a transparent conductivematerial, e.g., indium tin oxide (“ITO”) or indium zinc oxide (“IZO”).In such an exemplary embodiment, for example, ITO may include apolycrystalline material or a monocrystalline material, and IZO mayinclude a polycrystalline material or a monocrystalline material aswell.

The first sub-pixel electrode PE1 may further include or define thefirst extension electrode 181.

The first extension electrode 181 is located on the protection layer320. In an exemplary embodiment, for example, the first extensionelectrode 181 is located on the protection layer 320 of the transistorarea T. The first extension electrode 181 extends from the firstsub-pixel electrode PE1 in the first sub-pixel area P1 to the transistorarea T. The first extension electrode 181 is formed unitarily with thefirst sub-pixel electrode PE1. The first extension electrode 181overlaps the first drain electrode DE1. The first extension electrode181 is connected to the first drain electrode DE1 through or at thefirst contact hole CH1.

The first extension electrode 181 may include a material substantiallythe same as a material included in the first sub-pixel electrode PE1described above.

The second sub-pixel electrode PE2 is located on the protection layer320. In an exemplary embodiment, for example, the second sub-pixelelectrode PE2 is located on the protection layer 320 of the secondsub-pixel area P2.

The second sub-pixel electrode PE2 may include a material substantiallythe same as a material included in the first sub-pixel electrode PE1described above.

The second sub-pixel electrode PE2 may further include or define thesecond extension electrode 182.

The second extension electrode 182 is located on the protection layer320. In an exemplary embodiment, for example, the second extensionelectrode 182 is located on the protection layer 320 of the transistorarea T. The second extension electrode 182 extends from the secondsub-pixel electrode PE2 in the second sub-pixel area P2 to thetransistor area T. The second extension electrode 182 is formedunitarily with the second sub-pixel electrode PE2. The second extensionelectrode 182 is connected to the second drain electrode DE2 through orat the second contact hole CH2.

The second extension electrode 182 may include a material substantiallythe same as a material included in the first sub-pixel electrode PE1described above.

In addition, although not illustrated, a lower alignment layer may bedisposed on the first sub-pixel electrode PE1, the first extensionelectrode 181, the second sub-pixel electrode PE2, the second extensionelectrode 182 and the protection layer 320. The lower alignment layermay be a vertical alignment layer or an alignment layer including aphotosensitive material.

A black matrix 376 is located on a second (base) substrate 302. In anexemplary embodiment, for example, the black matrix 376 is located at aportion of the second substrate 302 excluding portions corresponding tothe sub-pixel areas P1 and P2. In an exemplary embodiment, the blackmatrix 376 may be located on the first substrate 301 instead of thesecond substrate 302.

The color filter 354 is located at the sub-pixel areas P1 and P2. Thecolor filter 354 includes one or more of a red color filter, a greencolor filter and a blue color filter. In an exemplary embodiment, thecolor filter 354 may be located on the first substrate 301 instead ofthe second substrate 302.

An overcoat layer 722 is located on the black matrix 376 and the colorfilter 354. In such an exemplary embodiment, the overcoat layer 722 maybe disposed or formed over an entire surface of the second substrate 302including the black matrix 376 and the color filter 354.

As planarizing layers on the second substrate 302, the overcoat layer722 serves to eliminate a height difference between components locatedbetween the overcoat layer 722 and the second substrate 302, e.g.,components on the second substrate 302 such as the black matrix 376 andthe color filter 354. In addition, the overcoat layer 722 substantiallyprevents a dye forming the color filter 354 from leaking to the outside.

The common electrode 210 is located on the overcoat layer 722. In suchan exemplary embodiment, the common electrode 210 may be located over anentire surface of the second substrate 302 including the overcoat layer722. Alternatively, the common electrode 210 may be located on theovercoat layer 722 corresponding to the first sub-pixel area P1 and thesecond sub-pixel area P2. A common voltage is applied to the commonelectrode 210.

In an exemplary embodiment, although not illustrated, an upper alignmentlayer may be located on the common electrode 210 and the overcoat layer722. The upper alignment layer may be a vertical alignment layer or analignment layer which is photo-aligned using a photopolymerizablematerial.

An optical control layer such as a liquid crystal layer 333 is locatedbetween the first substrate 301 and the second substrate 302 to controltransmittance of light for displaying an image. The liquid crystal layer333 may include a photopolymerizable material, and such aphotopolymerizable material may be a reactive monomer or a reactivemesogen. In an exemplary embodiment, a base substrate and respectivelayers thereon may be otherwise referred to a display substrate, wherethe optical control layer is disposed between display substrates facingeach other.

When a surface of the first substrate 301 and a surface of the secondsubstrate 302 that face each other are defined as upper surfaces of thecorresponding substrates, respectively, and surfaces opposite to theupper surfaces are defined as lower surfaces of the correspondingsubstrates, respectively, an upper polarization plate (not illustrated)is located on the lower surface of the first substrate 301, and a lowerpolarization plate (not illustrated) is located on the lower surface ofthe second substrate 302.

In an exemplary embodiment, a transmission axis of the upperpolarization plate and a transmission axis of the lower polarizationplate are orthogonal to each other, and one of the transmission axes isarranged parallel to the length direction of the line portion 411 of thegate line GL. In an exemplary embodiment, the display device may includeonly one of the upper polarization plate and the lower polarizationplate.

Hereinafter, another exemplary embodiment of a display device will bedescribed with reference to FIGS. 6 and 7. Descriptions ofconfigurations substantially identical to those of the exemplaryembodiment of FIGS. 1-5 will be omitted for the convenience ofexplanation.

FIG. 6 is a top plan view schematically illustrating another exemplaryembodiment of a pixel of a display device according to the invention,and FIG. 7 is an enlarged top view illustrating an exemplary embodimentof a method of repairing a signal line using a storage line in a pixelof the display device of FIG. 6. While structures related to a data lineat the first sub-pixel area P1 are described for repairing the signalline, the same method may be used for repairing defects using structuresrelated to the data line at the second sub-pixel area P2.

Referring to FIG. 6, a first storage line 760 includes a horizontalportion 761 arranged lengthwise parallel with a gate line GL and avertical portion 762 arranged lengthwise parallel with a data line DL,for a repair process of the data line DL. The vertical portion 762lengthwise extends from a portion of the horizontal portion 761overlapping the data line DL. The vertical portion 762 is disposedbetween a first sub-pixel electrode PE1 and the data line DL, at onlyone side of the data line DL.

A second storage line 770 includes a horizontal portion 771 arrangedlengthwise parallel with the gate line GL and a vertical portion 772arranged lengthwise parallel with the data line DL. The vertical portion772 lengthwise extends from a portion of the horizontal portion 771overlapping the data line DL. The vertical portion 772 is disposedbetween a second sub-pixel electrode PE2 and the data line DL, at onlyone side of the data line DL.

The data line DL includes a protruding portion DL1 provided in plural tooverlap a portion of the first storage line 760 and a portion of thesecond storage line 770. One or more protruding portions DL1 areprovided to respectively overlap the vertical portions 762 and 772, asillustrated in FIG. 6. In an exemplary embodiment, for example, theprotruding portion DL1 may be disposed at opposite end portions of thevertical portions 762 and 772, which area at opposing sides of the firstsub-pixel area P1 and the second sub-pixel area P2, along the verticaldirection, as illustrated in FIG. 6. Alternatively, the protrudingportion DL1 may be further disposed at center portions of the verticalportions 762 and 772 along the vertical direction.

In addition, the protruding portion DL1 is disposed lengthwise parallelwith the gate line GL, where plural protruding portions DL1 overlap aportion of the first sub-pixel electrode PE1 and a portion of the secondsub-pixel electrode PE2.

By configuring the data line DL, the first storage line 760 and thesecond storage line 770 in the above-described manner, the data line DLmay be relatively easily repaired, which will be described in detailwith reference to FIG. 7.

Referring to FIG. 7, an open defect may occur at a portion F of the dataline DL. In such an exemplary embodiment, a connecting portion CUT whichconnects the horizontal portion 761 and the vertical portion 762 of thefirst storage line 760 to each other is open to disconnect thehorizontal portion 762 from the vertical portion 762. The protrudingportions DL1 of the data line DL are connected at C1 and C2 to thevertical portion 762, bypassing the defect at portion F. Accordingly, adata signal D may be normally transmitted to the pixels through theprotruding portion DL1 and the vertical portion 762 of the first storageline 760 connected to the data line DL, and a voltage signal V may benormally transmitted to the pixels through the horizontal portion 761 ofthe first storage line 760. Accordingly, defects of the data line DL maybe relatively easily repaired as compared with a conventional structureof the prior art forming a separate conductive wiring in an additionalprocess. In addition, as compared with the convention structure of theprior art, the first storage line 760 may still serve an originalfunction of transmitted the voltage signal V even while a portionthereof is being used as the repair line.

Hereinafter, still another exemplary embodiment of a display device willbe described with reference to FIG. 8. Descriptions of configurationssubstantially identical to those of the exemplary embodiments of FIGS.1-7 will be omitted for the convenience of explanation.

FIG. 8 is a top plan view schematically illustrating still anotherexemplary embodiment of a pixel of a display device according to theinvention.

Referring to FIG. 8, a first storage line 780 and a second storage line790 further include bent portions 783 and 793 which connect horizontalportions 781 and 791 and vertical portions 782 and 792, respectively.One or more protruding portion DL1 of respective data lines DL overlapsthe bent portions 783 and 793. As the bent portions 783 and 793 areprovided, process efficiency of a repair process may be improved.

In the structure of FIG. 7, a connecting portion CUT which connects ahorizontal portion of a storage line to a vertical portion thereof, isdisposed relatively close to a respective data line DL. In the exemplaryembodiment of FIG. 8, the connecting portion (CUT in FIG. 7) whichconnects the horizontal portion 781 to the vertical portion 782 isdisposed spaced apart from a respective data line DL by a distancegreater than that in FIG. 7. That is, by including the bent portions 783and 793 in a (repair) process of opening or disconnecting the horizontalportion 761 from the vertical portion 762 as illustrated in FIG. 7, aconnecting portion which connects the horizontal portion 761 to thevertical portion 762 may be more spaced apart from the data line DL ascompared to the connecting portion CUT in FIG. 7. Accordingly, byincreasing a spacing of the connecting portion from the data line DL,damage to the data line DL may be substantially prevented in the repairprocess. Other configurations and effects of the exemplary embodiment inFIG. 8 are substantially the same as those of the exemplary embodimentin FIG. 7, and the repair method of the exemplary embodiment in FIG. 8is substantially the same as that of the exemplary embodiment in FIG. 7.

As set forth hereinabove, in a display device according to one or moreexemplary embodiments, a storage line functions both as asignal-transmitting or voltage-transmitting line and as a repair line ofa data line, thereby reducing a disconnection rate of the data line.

In addition, according to one or more exemplary embodiments, only avertical portion of the storage line is used as the repair line of thedata line, which is different from a conventional structure in aconventional repair method, and thus a horizontal portion of the storageline may still be used as a storage voltage transmission path.

While the invention has been illustrated and described with reference tothe exemplary embodiments thereof, it will be apparent to those ofordinary skill in the art that various changes in form and detail may beformed thereto without departing from the spirit and scope of theinvention.

What is claimed is:
 1. A display device comprising: a substrateincluding a display area at which an image is displayed; and on thesubstrate in the display area thereof: a data line and a gate line onthe substrate; a thin film transistor connected to the gate line and thedata line; a pixel electrode connected to the thin film transistor; anda storage line which overlaps the pixel electrode, wherein the storageline has a first hole at a position overlapping the data line.
 2. Thedisplay device of claim 1, wherein the storage line comprises: ahorizontal portion extended parallel to the gate line, and a verticalportion extended from the horizontal electrode portion to be parallel tothe data line.
 3. The display device of claim 2, wherein the horizontalportion has the first hole at a position overlapping the data line. 4.The display device of claim 2, wherein the vertical portion has a secondhole at a position overlapping the data line.
 5. The display device ofclaim 2, wherein the vertical portion extends from a portion of thehorizontal portion overlapping the data line.
 6. A display devicecomprising: a substrate; a data line and a gate line on the substrate,the data line transmitting a data signal; a thin film transistorconnected to the gate line and the data line; a pixel electrodeconnected to the thin film transistor; and a storage line which overlapsthe pixel electrode, wherein the data line comprises a protrusionextended directly from the data line, the protrusion overlapping thestorage line.
 7. The display device of claim 6, wherein the protrusionof the data line is extended parallel with the gate line.
 8. The displaydevice of claim 6, wherein the protrusion of the data line overlaps thepixel electrode.
 9. The display device of claim 6, wherein the storageline comprises: a horizontal portion extended parallel to the gate line,and a vertical portion extended from the horizontal portion to beparallel to the data line.
 10. The display device of claim 9, whereinthe vertical portion of the storage line is disposed between the pixelelectrode and the data line.
 11. The display device of claim 9, whereinthe protrusion of the data line overlaps the vertical portion of thestorage line.
 12. The display device of claim 11, wherein the protrusionof the data line overlaps the pixel electrode.
 13. The display device ofclaim 9, wherein the vertical portion of the storage line extends fromthe horizontal portion of the storage line at a position of the dataline.
 14. The display device of claim 9, wherein the storage linefurther comprises a bent portion connecting the horizontal portion andthe vertical portion to each other, at a position of the data line. 15.The display device of claim 14, wherein the protrusion of the data lineoverlaps the bent portion of the storage line which connects thehorizontal and vertical portions to each other.
 16. The display deviceof claim 6, wherein the protrusion includes a plurality of protrusionsoverlapping the storage line.
 17. The display device of claim 6, whereinthe protrusion does not contact the storage line.
 18. A display devicecomprising: a substrate including a display area at which an image isdisplayed; and on the substrate in the display area thereof: a gate lineand a data line through which data signals are transmitted to displaythe image; a thin film transistor connected to the data line; a pixelelectrode connected to the thin film transistor and adjacent to the dataline in a first direction parallel to the gate line; and a storage linewhich overlaps the pixel electrode and through which a voltage signal isapplied to the display area, the storage line comprising: a horizontalportion extended parallel to the gate line, and a vertical portionextended from the horizontal portion at the data line, the verticalportion extended along the data line which is adjacent to the pixelelectrode in the first direction, wherein the vertical portion of thestorage line overlaps the data line adjacent to the pixel electrode attwo positions of the data line.
 19. The display device of claim 18,wherein the vertical portion comprises: two vertical portions eachextended along the data line to be respectively disposed at opposingsides of the data line in the first direction, and two horizontalportions each extended along the first direction and connecting the twovertical portions to each other, wherein in a top plan view, thevertical portion of the storage line overlaps the data line adjacent tothe pixel electrode at the two horizontal portions.
 20. The displaydevice of claim 18, wherein the vertical portion extended along the dataline is disposed between the data line and the pixel electrode adjacentto each other in the first direction, the data line comprises twoprotruding portions each extended towards the pixel electrode, and in atop plan view, the vertical portion of the storage line which isdisposed between the data line and the pixel electrode overlaps the dataline at the two protruding portions thereof.